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1

Switching events in the soft breakdown I–t characteristic of ultra-thin SiO2 layers

E Miranda, J Suñé, R Rodrı́guez, M Nafrı́a, X Aymerich

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 150 KB

english, 1999

2

Influence of oxide breakdown position and device aspect ratio on MOSFET’s output characteristics

R. Fernández, R. Rodrı́guez, M. Nafrı́a, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 117 KB

english, 2005

3

Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films

R. Rodrı́guez, M. Porti, M. Nafrı́a, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

4

Conduction properties of breakdown paths in ultrathin gate oxides

E Miranda, J Suñé, R Rodrı́guez, M Nafrı́a, X Aymerich

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 161 KB

english, 2000

5

Breakdown spots of ultra-thin (EOT 

X. Blasco, M. Nafrı́a, X. Aymerich, J. Pétry, W. Vandervorst

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 235 KB

english, 2005

6

Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope

M Porti, X Blasco, M Nafrı́a, X Aymerich, A Olbrich, B Ebersberger

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 143 KB

english, 2001

7

Relation between defect generation, stress induced leakage current and soft breakdown in thin (

R Rodrı́guez, E Miranda, R Pau, J Suñé, M Nafrı́a, X Aymerich

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 153 KB

english, 2000

8

Characterising the surface roughness of AFM grown SiO2 on Si

D. Hill, X. Blasco, M. Porti, M. Nafrı́a, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 256 KB

english, 2001

9

Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM

M. Porti, S. Meli, M. Nafrı́a, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 160 KB

english, 2003

10

Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM

M. Porti, M. Nafrı&amp, #x0301, a, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2003

File:

PDF, 734 KB

2003

11

Effect of oxide breakdown on RS latches

R. Fernández, R. Rodrı´guez, M. Nafrı´a, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 234 KB

english, 2007

12

Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures

X. Blasco, M. Nafrı́a, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2002

File:

PDF, 759 KB

2002

13

Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

M. Porti, M. Avidano, M. Nafría, X. Aymerich, J. Carreras, B. Garrido

Year:

2005

Language:

english

File:

PDF, 399 KB

english, 2005

14

Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides

E Miranda, J Suñé, R Rodrı́guez, M Nafrı́a, X Aymerich

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 303 KB

english, 2001

15

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

Lanza, Mario, Porti, Marc, Nafría, Montserrat, Aymerich, Xavier, Benstetter, Günther, Lodermeier, Edgar, Ranzinger, Heiko, Jaschke, Gert, Teichert, Steffen, Wilde, Lutz, Michalowski, Pawel Piotr

Journal:

IEEE Transactions on Nanotechnology

Year:

2011

Language:

english

File:

PDF, 1.08 MB

english, 2011

16

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

Iglesias, V., Lanza, M., Zhang, K., Bayerl, A., Porti, M., Nafría, M., Aymerich, X., Benstetter, G., Shen, Z. Y., Bersuker, G.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 953 KB

english, 2011

17

A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals

M. Porti, M. Avidano, M. Nafrı́a, X. Aymerich, J. Carreras, B. Garrido

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 244 KB

english, 2005

18

Nanoscale electrical characterization of Si-nc based memory metal-oxide-semiconductor devices

Porti, M., Avidano, M., Nafría, M., Aymerich, X., Carreras, J., Jambois, O., Garrido, B.

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 946 KB

english, 2007

19

Feasibility of the electrical characterization of single SiO2 breakdown spots using C-AFM

M. Porti, R. Rodrı́guez, M. Nafrı́a, X. Aymerich, A. Olbrich, B. Ebersberger

Journal:

Journal of Non-Crystalline Solids

Year:

2001

Language:

english

File:

PDF, 205 KB

english, 2001

20

C-AFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature

X Blasco, J Pétry, M Nafrı́a, X Aymerich, O Richard, W Vandervorst

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 284 KB

english, 2004

21

Two-step stress methodology for monitoring the gate oxide degradation in MOS devices

R. Rodrı́guez, E. Miranda, M. Nafrı́a, J. Suñé, X. Aymerich

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 372 KB

english, 2001

22

Breakdown-induced negative charge in ultrathin SiO[sub 2] films measured by atomic force microscopy

Porti, M., Nafrı́a, M., Blüm, M. C., Aymerich, X., Sadewasser, S.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 453 KB

english, 2002

23

Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks

E. Miranda, P. Falbo, M. Nafría, F. Crupi

Year:

2008

Language:

english

File:

PDF, 403 KB

english, 2008

24

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

Lanza, M., Bersuker, G., Porti, M., Miranda, E., Nafría, M., Aymerich, X.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 3.96 MB

english, 2012

25

Detection and fitting of the soft breakdown failure mode in MOS structures

E Miranda, J Suñé, R Rodrı́guez, M Nafrı́a, X Aymerich

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 145 KB

english, 1999

26

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - (Invited) Variability and Reliability in Ultra-Scaled MOS Devices: How Should They Be Evaluated from Nanoscale to Circuit Level?

Nafría, Montserrat, Rodríguez, Rosana, Porti, Marc, Martín-Martínez, Jarvier, Lanza, Mario, Aymerich, Xavier

Year:

2010

Language:

english

File:

PDF, 1.39 MB

english, 2010

27

Atomic force microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films

M. Porti, M. Nafrı́a, M.C. Blüm, X. Aymerich, S. Sadewasser

Journal:

Surface Science

Year:

2003

Language:

english

File:

PDF, 141 KB

english, 2003

28

Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy

V. Iglesias, M. Porti, M. Nafría, X. Aymerich, P. Dudek, G. Bersuker

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 549 KB

english, 2011

29

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Lanza, M., Zhang, K., Porti, M., Nafría, M., Shen, Z. Y., Liu, L. F., Kang, J. F., Gilmer, D., Bersuker, G.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 995 KB

english, 2012

30

Hydrogen desorption in SiGe films: A diffusion limited process

Vizoso, J., Martín, F., Suñé, J., Nafría, M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 312 KB

english, 1997

31

Soft breakdown fluctuation events in ultrathin SiO[sub 2] layers

Miranda, E., Suñé, J., Rodríguez, R., Nafría, M., Aymerich, X.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 315 KB

english, 1998

32

Ultra thin films of atomic force microscopy grown SiO2 as gate oxide on MOS structures: conduction and breakdown behavior

Xavier Blasco, Montserrat Nafrı́a, Xavier Aymerich

Journal:

Surface Science

Year:

2003

Language:

english

File:

PDF, 178 KB

english, 2003

33

Exploratory observations of post-breakdown conduction in polycrystalline-silicon and metal-gated thin-oxide metal-oxide-semiconductor capacitors

Nafría, M., Sun̄é, J., Aymerich, X.

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 1.62 MB

english, 1993

34

Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution

M. Porti, S. Gerardin, M. Nafrı´a, X. Aymerich, A. Cester, A. Paccagnella, P. Schiavuta, R. Pierobon

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 1.69 MB

english, 2007

35

Nanometer-scale electrical characterization of stressed ultrathin SiO[sub 2] films using conducting atomic force microscopy

Porti, M., Nafrı́a, M., Aymerich, X., Olbrich, A., Ebersberger, B.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 394 KB

english, 2001

36

Modeling the breakdown spots in silicon dioxide films as point contacts

Suñé, J., Miranda, E., Nafría, M., Aymerich, X.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 294 KB

english, 1999

37

Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy

M Porti, M Nafrı́a, X Aymerich, A Olbrich, B Ebersberger

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 484 KB

english, 2001

38

Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter

Aguilera, L., Lanza, M., Porti, M., Grifoll, J., Nafría, M., Aymerich, X.

Journal:

Review of Scientific Instruments

Year:

2008

Language:

english

File:

PDF, 695 KB

english, 2008

39

Comparison of SiO2 and HfO2∕SiO2 gate stacks electrical behaviour at a nanometre scale with CAFM

Blasco, X., Nafría, M., Aymerich, X., Vandervorst, W.

Journal:

Electronics Letters

Year:

2005

Language:

english

File:

PDF, 105 KB

english, 2005

40

Reliability of SiO2 and high-k gate insulators: A nanoscale study with conductive atomic force microscopy

M. Porti, L. Aguilera, X. Blasco, M. Nafrı´a, X. Aymerich

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 357 KB

english, 2007

41

Publisher’s Note: “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

Iglesias, V., Lanza, M., Zhang, K., Bayerl, A., Porti, M., Nafría, M., Aymerich, X., Benstetter, G., Shen, Z. Y., Bersuker, G.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 220 KB

english, 2011

42

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

Fontserè, A., Pérez-Tomás, A., Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Iglesias, V., Porti, M., Bayerl, A., Lanza, M., Nafría, M.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.87 MB

english, 2012

43

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

Lanza, M., Porti, M., Nafría, M., Aymerich, X., Whittaker, E., Hamilton, B.

Journal:

Review of Scientific Instruments

Year:

2010

Language:

english

File:

PDF, 2.11 MB

english, 2010

44

Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides

M. Porti, M. Nafrı&amp, #x0301, a, X. Aymerich

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 202 KB

english, 2004

45

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

Pirrotta, Onofrio, Larcher, Luca, Lanza, Mario, Padovani, Andrea, Porti, Marc, Nafría, Montserrat, Bersuker, Gennadi

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.30 MB

english, 2013

46

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

Iglesias, V., Porti, M., Nafría, M., Aymerich, X., Dudek, P., Schroeder, T., Bersuker, G.

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 1.18 MB

english, 2010

47

Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM

Porti, M., Nafría, M., Aymerich, X., Cester, A., Paccagnella, A., Cimino, S.

Journal:

Electronics Letters

Year:

2005

Language:

english

File:

PDF, 96 KB

english, 2005

48

Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance

L. Aguilera, J. Martı´n-Martı´nez, M. Porti, R. Rodrı´guez, M. Cambrea, F. Crupi, M. Nafrı´a, X. Aymerich

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 329 KB

english, 2007

49

DC broken down MOSFET model for circuit reliability simulation

Fernández, R., Rodríguez, R., Nafría, M., Aymerich, X.

Journal:

Electronics Letters

Year:

2005

Language:

english

File:

PDF, 75 KB

english, 2005

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